SiC and GaN Devices With Cryogenic Cooling

Cryogenic Cooling System

Printed & published by Dr Mohinder Singh, Director, DESIDOC, on behalf of DRDO. RNI No. 55787/93 Readers of Technology Focus are invited to send their communications to the Editor, Technology Focus DESIDOC, Metcalfe House, Delhi 110 054. India Telephone: 011-23819975; Fax: 011-23819151; Drona-mail: [email protected] E-mail: [email protected], [email protected] Internet: http://www....

Growth and characterization of SiC and GaN

At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-quality substrates will significantly improve device performance and yield. One of the aims of the...

Characterization of Ni-implanted GaN and SiC

High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...

SiC Power Devices and Modules

SiC Power Devices and Modules